We are interested in understanding the fundamental details of chemical reactions at surfaces and interfaces.  These chemical reactions can influence the activity and product selective of catalysts, the nucleation and growth of thin films, the electrical performance of devices, and the oxidation or dissolution of materials. Our goal is to be able to determine the key reaction intermediates and predict ways to improve the materials performance.

We use a variety of surface science techniques including X-ray photoelectron spectroscopy, temperature programmed desorption, electron stimulated desorption (ESD), atomic force microscopy, and secondary ion mass spectrometry, but also electrical characterization of devices.  We have observed that we can relate the exposure chemistry of HfSOx e-beam resist with the desorption of molecular oxygen (m/z = 32).  We have discovered that the electrical stability of transparent amorphous oxide semiconductors can be significantly enhanced by controlling the exposed back channel surface chemistry using self-assembled monolayers.

Funding for this research is provided through the Semiconductor Research Corporation, and the National Science Foundation – Center for Sustainable Materials Chemistry.